Insight into the electronic structure and optoelectronic properties of BiOI
Feb 14, 2020
Our group has contributed to a study on bismuth oxyiodide, an emerging lead-free perovskite-inspired material, providing new insight into its electronic structure and optoelectronics properties.
This study, led by Dr. Robert Hoye (Imperial College London), assesses the defect tolerance of BiOI with respect to percent-level surface defects. The Pecunia Research Group contributed to this work by experimentally characterising the defect states in the bulk of BiOI films. We are greatly thankful to Dr. Hoye and all other authors for this valuable collaborative opportunity.
This work has been published in the journal Advanced Functional Materials.
T. N. Huq*, L. C. Lee*, L. Eyre, W. Li, R. A. Jagt, C. Kim, S. Fearn, V. Pecunia, F. Deschler, J. L. MacManus-Driscoll, and R. L. Z. Hoye†, “Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent-Level Iodine-, Oxygen-, and Bismuth-Related Surface Defects”, Advanced Functional Materials
, 1909983, 2020. DOI: 10.1002/adfm.201909983